Transistors

Article (4)
  • Molybdenite transistor claimed as a ‘first’
    Working transistors made from flakes of molybdenite have been made in Switzerland.
  • Stable patterned electrets for microsystem applications
    Imec and the Holst Centre have developed stable patterned electrets with feature sizes at least down to 20 µm. The technology consists of creating a charged profile in an SiO2/Si3N4 structure by exploiting the difference in energy between the charge traps in either layer and at their interface. Patterned electret layers can be used for a plurality of technical applications such as micromotors, sensors, actuators and energy scavengers.
  • Hydrogen helps smooth Ge deposition
    Imec has shown that the presence of hydrogen and/or inert species during Ge deposition significantly improves the quality of the Ge layers grown on Si by solid phase epitaxy (SPE). The resulting layers have excellent crystalline quality and low surface roughness, making SPE a valuable alternative for conventional heteroepitaxy which is performed typically at much higher temperatures.
  • Personalised medicine and the DNA transistor
    In an effort to build a nanoscale DNA sequencer, IBM scientists are drilling nano-sized holes in computer-like chips and passing DNA strands through them to read the information contained within their genetic code.
Feature (7)
  • Optimisations for future transistors
    IMEC has achieved promising results in the race to scale CMOS to 22 nm and below.
  • Transistors of the future
    The fast pace of growing computing power could be sustained for many years to come due to new research from Britain's National Physical Laboratory (NPL) that is applying advanced techniques to magnetic semiconductors.
  • Printed optical electronics come into view
    European researchers have taken a step towards the goal of developing printable electronics that can be used for creating radiofrequency identification tags and flexible watch displays.
  • Another step towards GaN power devices
    IMEC and AIXTRON have demonstrated the growth of AlGaN/GaN heterostructures on 200 mm silicon wafers. This demonstration is another step towards fabricating low-cost GaN power devices for high-efficiency/high-power systems beyond the silicon limits.
  • Alternative to silicon chip
    A transistor that uses gallium nitride (GaN) instead of silicon has been invented. It can reduce power consumption and improve the efficiency of power electronics systems in everything from motor drives and hybrid vehicles to house appliances and defence equipment.
  • Models make transistors more efficient
    New models of how two types of power transistors perform that will result in more efficient smart electrical circuits, making technologies such as cars and home appliances more reliable and environmentally friendly, have been developed by European researchers.
  • Graphene used to create tiny transistor
    Graphene has been used to create the world’s smallest transistor, one atom thick and 10 atoms wide, according to Dr Kostya Novoselov and Prof Andre Geim from The School of Physics and Astronomy at The University of Manchester.
Product (14)
  • Diodes SOT963 bipolar transistor, MOSFET and TVS device package
    Diodes has introduced bipolar transistor, MOSFET and TVS devices in the ultra-small SOT963 package, that are claimed to achieve the same or better performance than much larger packaged parts.
  • Avnet 10.2 MOSFETs
    Motor vehicle qualified 40 to 100 V 10.2 MOSFETs are an expansion of IR’s family of qualified power MOSFETs specifically designed for applications requiring low on-state resistance (RDS(on)).
  • International Rectifier vehicle MOSFETs range
    International Rectifier has introduced the company’s first dedicated family of motor vehicle-qualified MOSFETs for a range of applications requiring low on-state resistance including electric power steering, integrated starter alternator pump and motor control, DC-DC conversion, battery switch and other heavy loads on internal combustion engine and hybrid vehicle platforms.
  • Can DirectFET
    International Rectifier has introduced the IRF6718 DirectFET MOSFET.
  • Backlighting MOSFETs
    Diodes Inc has extended its MOSFET range with the introduction of 15 devices tailored to the needs of LCD TV and monitor backlighting.
  • MOSFET family
    Infineon has released the OptiMOS 375 V MOSFET family with characteristics suitable for energy-efficient power conversion.
  • IGBT driver
    QC841 is a hybrid integrated IGBT driver with built-in electrical isolation between power devices and control circuits with the high CMRR optocoupler.
  • Power MOSFET
    Vishay has unveiled the first device built on its p-channel TrenchFET Gen III technology, a 20 V device with a claimed lowest on-resistance ever achieved for a p-channel MOSFET with the footprint area of an SO-8.
  • N-channel MOSFET driver
    Linear Technology has introduced the LTC4447, a high-speed synchronous MOSFET driver designed to drive upper and lower power N-channel MOSFETs in a synchronous rectified converter topology.
  • Punch-through IGBTs
    Microsemi has announced a family of high-speed power MOS8 insulated gate bipolar transistors featuring punch-through technology in 600 and 900 V devices.
  • Energy-efficient transistors
    Central Semiconductor has released the Femtomini CMNT3904E (NPN) and CMNT3906E (PNP) low VCE(SAT) transistors, packaged in the SOT-953.
  • DirectFET MOSFETs
    International Rectifier has introduced a family of 30 V directFET MOSFETs optimised for synchronous buck converter designs for notebook computers, server CPU power, graphics and memory voltage regulator applications.
  • MOSFET chipset
    Developed using the latest HEXFET MOSFET silicon technology and IR's DirectFET packaging technology, the IRF6712S control FET and IRF6716M sync FET are characterised with low package inductance and device on-state resistance, gate charge and gate-to-drain charge to achieve high efficiency and thermal performance for high-current DC-DC converters.
  • 100 W GaN-on-Si power transistor for Wi MAX applications
    Nitronex, an innovative developer and manufacturer of high-performance RF power transistors for the commercial and broadband wireless infrastructure markets, has developed a 28 V, 100 W gallium nitride high electron mobility transistor (HEMT), ideal for WiMAX applications. Designed using Nitronex's patented Sigantic NFR1 process, the NPT25100 GaN-on-Si power transistor is designed specifically for 2.3 - 2.7 GHz WiMAX applications. Typical performance is rated using a mobile WiMAX waveform defined as a single carrier OFDM signal 64-QAM ¾, 8 burst, 3.5 MHz channel bandwidth, 10.3 dB PAR @ .01% probability on CCDF. Under these test conditions, the NPT25100 will deliver 14.5 dB of gain (typical), 21% efficiency, and less than 2.5% EVM — all at >10 W of power.
News (10)
  • IGBT selection tool
    International Rectifier has available an online insulated gate bipolar transistor (IGBT) selection tool that enables design optimisation in a wide range of applications including motor drives, uninterruptible power supplies, solar inverters and welding.
  • GaN-on-Si device opens market
    IMEC has produced simple and robust GaN-on-Si double heterostructure FET (field effect transistor) architecture for GaN-on-Si power switching devices.
  • SAMFET secrets revealed
    An international team of researchers from the Netherlands, Russia and Austria has found that monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors (SAMFETs).
  • Novel scheme to fabricate Ge virtual substrates
    IMEC has used selective epitaxial growth and chemical mechanical polishing to obtain Ge virtual substrates with low threading dislocation density.
  • 'Noisy' transistors gets a rethink
    There is a newly found flaw in our understanding of transistor noise, a phenomenon affecting the electronic on-off switch that makes computer circuits possible.
  • Graphene discovery wins major award
    Two physicists from The University of Manchester who discovered the world’s thinnest material have scooped a major award for their work.
  • Power transistor distributor
    Richardson Electronics has signed a global distribution agreement with HVVi Semiconductors of Phoenix, AZ, to distribute its RF power transistors, based on HVVi’s HVVFET architecture.
  • Transistor Holy Grail nearer
    Better switching performance of transistors of disordered silicon films can be achieved by making the conduction channel in the device very thin, according to research at the University of Surrey in England.
  • Fabrication of CNT transistor using coating process
    NEC Corporation has developed a carbon nanotube (CNT) transistor using a coating process. The basic operation of the new transistor with advanced characteristics has been verified, confirming its application in the printed electronics field.
  • Distribution partnership announced
    Richardson Electronics has announced a North American distribution partnership with Avago Technologies, of San Jose, California, to distribute its complete line of RFIC, transistor, Schottky and PIN diode, and millimetre wave (mmW) products.
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