Semiconductors

Article (12)
  • Gas sensing at the single particle level
    Such highly coveted technical capabilities as the observation of single catalytic processes in nanoreactors or the optical detection of low concentrations of biochemical agents and gases are an important step closer to fruition.
  • Tri-Gate transistor set to storm industry
    Intel has announced what it calls a significant breakthrough in the evolution of the transistor, the microscopic building block of modern electronics.
  • Future power could come from body movements
    After six years of effort, scientists are reporting development of the first commercially viable nanogenerator, a flexible chip that can use body movements - a finger pinch now en route to a pulse beat in the future - to generate electricity.
  • Hybrid spintronic chips come closer
    Researchers have created what is claimed to be the first electronic circuit to merge traditional inorganic semiconductors with organic ‘spintronics’ - devices that use the spin of electrons to read, write and manipulate data.
  • Understanding and comparing IGBT module datasheets
    This might sound somewhat overdone but comparing IGBT modules using datasheets is not as easy as it might appear. A rough comparison can, of course, be made using the component blocking voltage (VCES, eg, 1200) and the nominal current (ICnom = 100, 200 A …).
  • Plasmonics promises superfast computers
    With its promise of superfast computers and ultrapowerful optical microscopes among the many possibilities, plasmonics has become one of the hottest fields in high technology.
  • Water could hold answer to graphene nanoelectronics
    Researchers at Rensselaer Polytechnic Institute in New York have developed a method for using water to tune the band gap of the nanomaterial graphene, opening the door to new graphene-based transistors and nanoelectronics.
  • Semiconductor making made more energy efficient
    Scientists at the Department of Energy’s Lawrence Berkeley National Laboratory, in cooperation with the International SEMATECH Manufacturing Initiative, have released, for beta testing, a computer-based tool to help the world’s semiconductor manufacturing facilities evaluate and improve their energy efficiency.
  • Reliable power electronics for windmill generators
    In the megawatt range, high-power electronics applications need powerful semiconductors. However, even the largest semiconductors available today are still not strong enough for some applications. It is therefore necessary to connect them in parallel. The parallel connection of semiconductor devices in a traditional power electronics circuit is very common.
  • Si substrate loss measured after ion implantation
    IMEC has shown that spectroscopic ellipsometry can be used to measure Si substrate loss after ion implantation. With decreasing device dimensions, the need for this kind of metrology has become more and more important.
  • Spintronics research attracts $754,000 grant
    A team of researchers, from the University of Surrey in England and two other institutions, has been awarded a grant of around $754,000 to develop ultra-small-scale silicon structures for ‘spintronic’ semiconductors.
  • Persistent spin state could revolutionise spintronics
    By controlling the collective spin state of highly mobile electrons in semiconductors, researchers in the Materials Sciences Division at the US Department of Energy’s Lawrence Berkeley National Laboratory claim to have taken a major step forwards in the technology of spintronics.
Feature (1)
Product (39)
  • Vishay low input current optocouplers
    Vishay has released six low input current optocouplers with phototransistor output in the DIP-4, SSOP-4 half-pitch miniflat and SOP-4L long miniflat packages. The optocouplers provide isolation for human and equipment safety.
  • Renesas BCR8LM-14LK high-commutation triac
    The BCR8LM-14LK high-commutation triac from Renesas supports rated RMS on-state current of 8 A, rated repetitive peak off-voltage of 700 and can be triggered by a microcontroller.
  • Summit Microelectronics SMB346/SMB347 charger ICs
    Summit Microelectronics has expanded its fourth-generation family of programmable Li-Ion battery charger integrated circuits with the SMB346 and SMB347 that deliver up to 2.5 A charge/system current with dual input/dual output CurrentPath for operation with a dead or missing battery.
  • Microchip Technology MCP795WXX/BXX RTCC time/calendar devices
    The MCP795WXX/BXX RTCC range of stand-alone, real-time clock/calendar devices from MIcrochip, has a 10 MHz SPI interface, non-volatile memory.
  • Texas Instruments National LM48901 quad Class D spatial array
    Texas Instruments has introduced an integrated circuit that simplifies the design and programming of spatially-enhanced audio systems for multi-speaker portable products, including laptops, tablets, sound bars and sound docking stations.
  • International Rectifier IRGPS4067DPbF/IRGP4066DPbF insulated gate bipolar transistors
    International Rectifier has expanded its portfolio of rugged, ultra-fast 600 V trench insulated gate bipolar transistors (IGBTs) with the introduction of the IRGPS4067DPbF and IRGP4066DPbF devices for uninterruptible power supplies, solar, industrial motor and welding applications.
  • International Rectifier IR3553 PowIRstage power IC
    International Rectifier has expanded its PowIRstage family of integrated devices with the 40 A IR3553, optimised for next-generation servers, consumer and communication systems.
  • Vishay 2N6660JANTX/JANTXV and 2N6661JANTX/JANTXV MOSFETs
    Vishay has introduced the first of its new Siliconix military-grade n-channel power MOSFETs - the JAN-qualified 60 V 2N6660JANTX/JANTXV and the 90 V 2N6661JANTX/JANTXV.
  • Diodes DiodeStar DSR6V600P5/DSR6U600P5 rectifiers
    Diodes has expanded its range of DiodeStar products with the introduction of two 600 V rectifiers, targeted at power factor correction boost diode applications.
  • Texas Instruments LMK03806 integrated clock generator
    An integrated clock generator featuring good jitter performance offers designers the ability to synthesise their required clock frequencies from a single low-cost crystal, enabling a reduction in component count of up to 80%, board size.
  • International Rectifier 600 V IGBTs
    International Rectifier has introduced a family of motor vehicle-qualified 600 V IGBTs optimised for variable speed motor control and power supply applications used in electric and hybrid vehicles.
  • Renesas Electronics NESG7030M04 SiGe:C heterojunction biopolar transistor
    A SiGe:C heterojunction bipolar transistor, the NESG7030M04, has been released for use as a low-noise amplifier transistor for wireless LAN systems, satellite radios and similar applications.
  • Vishay SiB437EDKT TrenchFET power MOSFET
    Vishay has introduced an 8 V p-channel TrenchFET power MOSFET featuring what is claimed to be the lowest on-resistance for a p-channel device in the 1.6 by 1.6 mm footprint area with a profile under 0.8 mm. In addition, the SiB437EDK is said to be the only device offering an on-resistance rating down to 1.2 V.
  • Renesas 100 A MOSFETs for motor drives
    Renesas has developed a 100 A MOSFETs for motor drives in consumer products, such as cordless power tools and power-assisted bicycles.
  • International Rectifier IRLHS6276 power MOSFETs
    International Rectifier has enhanced its PQFN offering with the introduction of a PQFN 2 x 2 mm and PQFN 3.3 x 3.3 mm package that integrate two HEXFET MOSFETs, using the latest silicon technology, to deliver a high density solution for low power applications.
  • National Semiconductor LM5113 half-bridge gate driver
    National Semiconductor has introduced what is claimed to be the first 100 V half-bridge gate driver optimised for use with enhancement-mode gallium-nitride (GaN) power field-effect transistors in high-voltage power converters.
  • Maxim MAX17710 IC energy harvesting
    Maxim has introduced the MAX17710, said to be the industry’s first IC to integrate all the power-management functions for ambient energy harvesting, as well as for charging and protecting micro-energy cells (MECs), a form of solid-state battery.
  • International Rectifier ultra-compact MOSFET range
    International Rectifier has extended its packaging with the introduction of a PQFN 2 x 2 mm package featuring its latest HEXFET MOSFET silicon that delivers an ultra-compact, high density solution for a wide variety of lower power applications including smart phones, tablet PCs, camcorders, digital still cameras and notebook PCs.
  • Diodes ultraminiature DFN1006-3 MOSFETs
    Diodes has unveiled a portfolio of MOSFETs in the ultraminiature DFN1006-3 package.
  • Semikron MiniSKiiP IGBT power semiconductor module
    Semikron has released its latest MiniSKiiP IGBT power semiconductor module, which is now also available in three-level topology.
  • International Rectifier IRS2580DS Combo8 ballast-control IC
    International Rectifier has introduced what it claims is the first IC to integrate power factor correction and ballast control in a single compact 8-pin SO-8 package.
  • Diodes ZXCT11xx series low-power, high-side current monitors
    With an operating current of 3 µA, the ZXCT11xx series of low-power, high-side current monitors from Diodes provides accurate, high-efficiency measurement of load current in motor drive, overload protection and safety applications.
  • International Rectifier AUIRL7732S2/AUIRL7736M2 motor vehicle MOSFET
    International Rectifier has introduced a motor vehicle DirectFET2 power MOSFET chipset optimised for DC-DC applications used in internal combustion engine cars, and hybrid and electric vehicles.
  • AWR Corporation process design kit
    AWR Corporation has released a process design kit supporting Cree’s high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit foundry process.
  • Cree RF CGH40045 pill package transistor
    The Cree RF GaN HEMT transistor CGH40045 is now available in a thermally enhanced pill package, suitable for small form factor HPAs, and allows reflow soldering to a heat sink. It offers the same performance in a smaller size.
  • Cree RF CGH35240F and CGH31240F S-band HEMTs
    The Cree RF CGH35240F and CGH31240F are S-band, 240 W pulsed radar GaN HEMT transistors fully matched to 50 Ω. The CGH31240F operates from 2.7-3.1 GHz, while the CGH35240 operates from 3.1-3.5 GHz. They are both suitable for short and long pulse applications with good signal fidelity.
  • Cree RF CGH40006S GaN HEMT transistor
    The Cree RF CGH40006S is claimed to be the first GaN HEMT transistor in a QFN plastic package.
  • Vishay AS1Px standard/AR1Px fast/AU1Px ultrafast rectifier range
    Vishay has introduced nine series of low-profile, surface-mount standard, fast and ultrafast avalanche rectifiers with 20 MJ EAS avalanche capability and forward currents up to 4 A in SMPC packages.
  • Adlink ASD industrial-grade solid state drive series
    Adlink has released the ASD series of industrial-grade solid state drives, designed to meet the needs of applications in severe environments.
  • National Semiconductor clock jitter cleaner range
    National Semiconductor has introduced a family of clock jitter cleaners featuring what it claims is the industry’s lowest phase noise and RMS jitter performance: 111 femtosecond (fs) from 12 kHz to 20 MHz and a wideband noise floor of -162 dBc/Hz at 184 MHz output.
  • International Rectifier IR3550 PowIRstage device
    International Rectifier has introduced the IR3550, the first in a family of integrated PowIRstage products that deliver higher efficiency and better thermal performance.
  • International Rectifier dual-power MOSFET range
    International Rectifier has introduced the company’s first family of radiation-hardened (RAD-Hard), dual-power MOSFETs in a compact hermetic LCC-6 surface-mount package for low-power, lightweight space applications requiring a small footprint such as satellite payload power systems.
  • Diodes Diodestar rectifier process
    Diodes has developed a process to manufacture next-generation high-voltage rectifiers.
  • ZMD ZLED7020/ZLED7030 LED drivers
    ZMD has released two devices to complement its family of LED driver integrated circuits.
  • ON Semiconductor AEC-Q101 power MOSFETs
    ON Semiconductor has introduced six AEC-Q101 qualified logic level, single-channel, power MOSFETs for motor vehicle modules in small, flat lead packages.
  • Renesas PS7901D-1A optical-coupled MOSFET
    Renesas has developed an optical-coupled MOSFET, the PS7901D-1A, that is claimed to achieve electrical isolation within the package by using light for signal transmission.
  • Vishay 8 V p-channel TrenchFET power MOSFET
    Vishay has introduced an 8 V p-channel TrenchFET power MOSFET with what is claimed to be the lowest on-resistance ever achieved for a p-channel device in the thermally enhanced PowerPAK SC-70 2 by 2 mm footprint area.
  • Sensor conditioning IC
    ZMD has expanded its family of capacitive sensor signal conditioning devices with the wide dynamic range ZMD31210 cLite IC.
  • Energy-saving MCU
    Power consumption in CMOS ICs is broadly classified as dynamic power in an operating circuit, such as switching and static power, an example being leakage which is measured any time a circuit is powered on.
News (2)
  • Flexible electronics
    SmartKem's semiconductor materials have achieved a TFT mobility rating higher than other traditional organic equivalents.
  • Chip revenue down by 114.4% in 2009
    The semiconductor industry will post a revenue decline for just the sixth time in the last 25 years, with worldwide revenue totalling $245 billion in 2009, an 11.4% decline from 2008, according to preliminary estimates by Gartner.
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