AWR Corporation has released a process design kit supporting Cree’s high-power gallium nitride (GaN) high electron mobility transistor (HEMT) monolithic microwave integrated circuit foundry process.
The kit enables MMIC designers to model Cree’s GaN HEMT MMIC process within AWR’s Microwave Office software environment and enable the design of MMICs with more power bandwidth, higher efficiency and a smaller footprint.
The process features high power density (4-6 W/mm) transistors, slot vias and high reliability (up to 225°C operating channel temperatures), as well as scalable transistors. In addition, it uses AWR’s Intelligent Net (iNet) automated interconnect construction technology to automatically radius and fillet corners when connecting different parts together, ensuring design-rule-check (DRC)-compliant layouts and eliminating the need for manual editing.
The kit is also set up for ready electromagnetic extraction through AWR’s Extract that eliminates manually editing schematics for EM results.
