The Cree RF CGH40006S is claimed to be the first GaN HEMT transistor in a QFN plastic package.
The gallium nitride (GaN) high electron mobility transistor (HEMT) operates from a 28 V rail and offers a general-purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making this device suitable for linear and compressed amplifier circuits.
