Cree RF has released GaN HEMT transistors for frequency-agile, software defined radios, 3G/4G telecom BTS, C-OFDM data-links and satcom applications.
The devices are suitable for many communications applications especially those seeking to improve bandwidth, efficiency and frequency of operation, or for transmitters challenged to reduce size and weight.
The family of products includes 6 to 120 W, unmatched, packaged discrete devices suitable from DC-2 GHz, 1.8-2.3 GHz, 3.3-3.8 GHz, and 4.9-5.8 GHz. The portfolio also includes high-power internally matched devices at 120 and 240 W levels operating at 1.8-2.3 and 2.5-2.7 GHz.
