Development of novel conduction control technique for graphene

By ElectronicsOnline Staff
Friday, 23 November, 2012

Researchers at the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), in joint work with a NIMS team headed by Dr Kazuhito Tsukagoshi, a MANA Principal Investigator at the NIMS International Center for Materials Nanoarchitectonics, have developed a novel technique for controlling the electrical conductivity of graphene.

In the technique developed, a helium ion beam is irradiated on graphene using a helium ion microscope to artificially introduce a low concentration of crystal defects, and it becomes possible to modulate the movement of electrons and holes in the graphene by applying a voltage to the gate electrode. Although this phenomenon of conduction control by introduction of crystal defects had been predicted theoretically, there were no examples in which on/off operation at room temperature was achieved experimentally. It is possible to introduce the technique developed in this work in the existing framework of production technology, including large area wafers.

Related News

Open source 3D printing materials now available

Aleph Objects and IC3D Industries have announced the availability of what is claimed to be the...

100,000 users for free PCB design tool

RS Components, the trading brand of Electrocomponents, the global distributor for engineers, has...

Design environment enhanced for power supply applications

STMicroelectronics is extending the focus of its eDesignSuite online design environment with the...

  • All content Copyright © 2017 Westwick-Farrow Pty Ltd