Transistors made of reduced graphene oxide


By ElectronicsOnline Staff
Wednesday, 12 April, 2017


Rgo sidebar

Researchers from North Carolina State University (NC State) have developed a technique for converting positively charged (p-type) reduced graphene oxide (rGO) into negatively charged (n-type) rGO, creating a layered material that can be used to develop rGO-based transistors for use in electronic devices.

“Graphene is extremely conductive, but is not a semiconductor,” explained Professor Jay Narayan. “Graphene oxide has a bandgap like a semiconductor, but does not conduct well at all. So we created rGO.

“But rGO is p-type, and we needed to find a way to make n-type rGO. And now we have it for next-generation, two-dimensional electronic devices.”

With the assistance of PhD student Anagh Bhaumik, Professor Narayan was able to integrate rGO onto sapphire and silicon wafers. The researchers then used high-powered laser pulses to disrupt chemical groups at regular intervals across the wafer. This disruption moved electrons from one group to another, effectively converting p-type rGO to n-type rGO.

The process was done at room temperature and pressure, using high-power nanosecond laser pulses, and completed in less than one-fifth of a microsecond. The laser radiation annealing provided a high degree of spatial and depth control for creating the n-type regions needed to create p-n junction-based two-dimensional electronic devices.

The end result, published in the Journal of Applied Physics, was a wafer with a layer of n-type rGO on the surface and a layer of p-type rGO underneath. The p-n junction, where the two types meet, is what makes the material useful for transistor applications.

Related News

Fujitsu to build Taiwan's highest-performing supercomputer

Fujitsu and Fujitsu Taiwan will build a new supercomputer system for Taiwan's National Center...

A new spin on transistors

A US engineer has designed a novel computing system, made entirely from carbon, which may one day...

Putting an end to cracked screens

An international team of scientists is working together to bring an end to cracked smartphone and...


  • All content Copyright © 2017 Westwick-Farrow Pty Ltd